MAS differs from most of the fabless semiconductor houses by having also own technology development.  The low power, low voltage and low noise process technology that MAS is using now has been developed in-house during the more than 25 years of operation, with a focus on portable, battery operated applications.  MAS designs benefit from the possibility of always using the most suitable combination of low and high threshold MOS transistors, both types of vertical bipolar transistors, accurate and area efficient capacitors and thin film resistors as well as varactors and trimming elements.  The deep knowhow on technology development brings MAS an excellent position for optimizing the products not only by using the best design solutions but also by using tailored technology elements and even implementing new ones when necessary.

Thin film resistors used by MAS are very area efficient, resistance values ranging from 1 kohm /square to 10 kohm/square.  The 10 kohm/square resistor process makes it possible to integrate a 10 Mohm resistor in an area of only 80um x 85um, which is about a size of a normal I/O pad opening. The relative accuracy of the thin film resistors is better than +-0.01% which makes it possible to implement DACs up to 14-16 bits without trimming. The high linearity and good stability of the resistor make it an excellent choice also for the most demanding applications.

The metal-to-metal capacitors used by MAS have voltage dependency below +-1ppm/V, and their high frequency behaviour is extremely good up to GHz range.  The high capacitor coefficient of 1.9fF/um2 makes it possible to integrate a 100pF capacitor in an area of not more than 200um x 265um.